| 摘要 |
PURPOSE:To obtain a photoconductive member good and stable in electrical, optical, and photoconductive characteristics, improved in photosensitivity in a longer wavelength region, and superior in both mechanical strength and durability, by forming a photoreceptor of a specified layer structure made of a-SiGe(H, X) on a substrate. CONSTITUTION:A photoconductive photoreceptor 102 is formed on a substrate 101, and it is composed of the first layer 103 made of amorphous Si, from the side of the substrate, and the second layer 104 made of amorphous Si and Ge, and the third layer 105 made of amorphous material contg. Si and N. The layer 104 contains Ge in a concn. distribution nonuniform in the layer 104 thickness direction, and at least one of the layers 103 and 104 contains O, and H and/or halogen, and further, preferably, a material for governing conductivity. The formation of the photoreceptor 102 having such a layer structure can improve electrical, optical, photoconductive, voltage withstanding, and use environment withstanding characteristics. |
