| 摘要 |
PURPOSE:To obtain a CCD provided with element isolating regions that restrict charge transfer channels capable of simple formation by a method wherein an anodic oxide film is provided on an active region except the element isolating regions. CONSTITUTION:Active regions 38 are formed at the part provided with anodic oxide films 32 under read-out electrodes 34 and accumulation electrode 36, and the element isolating region 37 exists between the active regions 38. When a light strikes on the accumulation electrode 36, charges generate thereunder and then read out by being led out by impressing the read-out electrode 34. At that time, an inactive region 37 without the anodic oxide film remains under accumulation, and the capacitor is formed only of an insulation film 33. Contrarily at the part with the anodic oxide film, the capacitance varies by the series connection of the insulation film capacitor to the depletion layer capacitor. Thus, the element isolating region comes into the state of invariable accumulation, and the leak-in of an excess of charges into the transfer channel is prevented by the restriction of the potential well, resulting in the confinement of minority carriers in the lateral direction. |
