| 摘要 |
PURPOSE:To make the thickness of a film formed by chemical vapor deposition uniform by rotating a susceptor placed vertically in a reactor around a horizontal shaft, heating it with a high frequency induction heater, and feeding a reactive gas into the reactor. CONSTITUTION:A susceptor 3 placed in a reactor 1a with the edge faces 3A, 3B vertical is rotatably supported by a supporting mechanism 4. While being rotated around the mechanism 4 with a rotation driving mechanism 9, the susceptor 3 is heated with the heating disc coils 5 of a high frequency heater arranged opposite to the faces 3A, 3B at prescibed intervals. After heating the susceptor 3 to a prescribed temp. or above, while continuing the heating, a reactive gas is introduced into the reactor 1a from reactive gas feeding pipes 10 to form films on the surfaces of the susceptor 3 by chemical vapor deposition. |
