| 摘要 |
PURPOSE:To realize formation of a film at a high speed with less adherence of foreign matters, due to abnormal discharge, onto a substrate to which a film may be formed by setting, not orthogonally, the direction of magnetic field for discharge trapping at the interface between a plurality of target members and the direction of electric field on the main surface. CONSTITUTION:The direction of discharge trapping magnetic field at the area corresponding to the interface of a plurality of target members 801-803 in the main surface to be sputtered is set not orthogonal to the direction of electric field on the main surface and the interface thereof is set in the no-corrosive region of target material due to the sputtering. For example, those having the double magnetic pole structure and is capable of changing the diameter of annular plasma are used for the sputter electrode body and the molybdenum target member 801 is protruded from the external silicon target member 802 and the center silicon target member 803. A mixed film of molybdenum and silicon having the predetermined composition can be formed uniformly on the substrate 110 where a film may be formed by executing the sputtering while the diameter of annular plasma is changed with adequate period. |
