| 摘要 |
PURPOSE:To reduce a reactive product or dusts placed on a semiconductor wafer by performing a plasma reaction in the state that the wafer is held with the upper electrode directed downward. CONSTITUTION:A semiconductor wafer 12 is carried by a supply arm 17 onto an upper electrode 11, a lifting pin 15 contained in the electrode 11 is raised to separate the wafer 12 from the arm 17. Then, when the pin 15 is moved down and the wafer 12 is disposed on the upper electrode, a retaining pawl 13 is rockably moved at the pin 14 as a fulcrum, and the wafer 12 is held on the electrode 11. Then, power is applied to a high frequency power source 19 connected with the electrode 18 to perform a plasma reaction, thereby performing the etching of the wafer 12. |
