发明名称 SPUTTERING DEVICE
摘要 PURPOSE:To form easily a thin alloy film having an optional compsn. ratio by combining a target cover having an aperture and a rotatable shutter and changing an aperture area. CONSTITUTION:An aperture is formed at the center on the top surface of a target cover 12 and a shutter 14 having a semicircular shape, etc. rotating around a shaft 13 is provided. When the shutter 14 is rotated in the stage of sputtering, the aperture area of the cover 12 changes and the area ratio of the ion sputtering region incident to targets 11a, 11b, i.e., the evaporation ratio of molecules changes. The compsn. ratio of the deposited film changes accordingly. The thin film controlled to a desired compsn. ratio of Ni, Cr, etc. by such mechanism is formed on a substrate 10. When the rotating angle of the shutter 14 is changed during sputtering, the thin alloy film having the compsn. changing in the film thickness direction is formed.
申请公布号 JPS60131966(A) 申请公布日期 1985.07.13
申请号 JP19830240215 申请日期 1983.12.20
申请人 MATSUSHITA DENKI SANGYO KK 发明人 TANAKA KUNIO;IKEDA TANEJIROU
分类号 C23C14/04;C23C14/34 主分类号 C23C14/04
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