发明名称 VOLTAGE GENERATION CIRCUIT
摘要 PURPOSE:To obtain a generation circuit of large power for charge injection by a method wherein the first pressuring capacitor is connected between the gate and the source of a load transistor of the first inverter circuit in two inverters which are the principal components of a waveform-shaping circuit unit constituting a reference voltage generation circuit, and the second pressuring capacitor is provided between an output terminal of the second inverter circuit and the drain of the load transistor of the first inverter circuit. CONSTITUTION:Inverters I1-I9 made up of odd-number steps are connected in series into a ring oscillator, and the waveform-shaping circuit is composed of transistors Q11-Q21 and capacitors C11-C13. A voltage supply circuit is composed of transistors Q22 and Q23 and a capacitor C14, and the first signal inversion circuit, i.e., the first inverter circuit, is composed of transistors Q18 and Q19. Similarly, the second inverter is composed of the transistors Q20 and Q21. Then, these are operated in synchronization with an output node signal of an inverter of the oscillator.
申请公布号 JPS60130159(A) 申请公布日期 1985.07.11
申请号 JP19830239107 申请日期 1983.12.19
申请人 MATSUSHITA DENKI SANGYO KK 发明人 YOMO MICHIHARU
分类号 H01L27/04;G05F3/20;H01L21/822;H01L21/8234;H01L27/088 主分类号 H01L27/04
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