| 摘要 |
PURPOSE:To simply manufacture under ready control a surface light emitting diode of good quality having a current narrowing layer therein by forming a hole in a semiconductor layer epitaxially grown on a primary layer, performing a meltback to expose the primary layer, and epitaxially growing another semiconductor layer on the remaining semiconductor layer of the exposed surface and at the periphery of the hole. CONSTITUTION:A lower clad layer 2, an active layer 3 and the first layer 4a for forming the upper clad layer are sequentially grown epitaxially on a substrate 1. Then, the layer 4a is used as a primary layer, and a semiconductor layer 5 to become a current narrowing layer is epitaxially grown. Then, the layer 5 is opened. This hole 6 is formed at the portion for flowing an implanted carrier and producing a light. Then, the layer 4a of the portion of the hole 6 for meltback is exposed. Subsequently, layer 5b made of the same conductive type and material as the layer 4a is epitaxially grown in a liquid phase on the layer 4a of the primary layer and the layer 5, and the layer 7 is epitaxially grown in a liquid phase on the layer 4b. |
