| 摘要 |
PURPOSE:To attain easily manufacture of a three dimentionally integrated circuit by a method wherein a seed part of single crystal is formed in the opening of an insulating film, and a non-single crystal semiconductor layer formed thereon is irradiated with an energy beam. CONSTITUTION:A non-doped epitaxial single crystal layer is grown to be filled up in an opening part to form a seed part 9. A non-single crystal semiconductor layer, a poly-silicon layer 10 for example, is formed on an insulating film 7 containing the seed part 9. Then, a laser beam is scanned on the substrate to heat and melt the insulating film from the seed part 9, the poly-silicon layer 10 is heated to be molten in order, and a single crystal layer 11 having the same orientation with the seed part is formed according to laterally epitaxial growth in the horizontal direction. |
