| 摘要 |
PURPOSE:To increase the degree of freedom of arrangement of a write circuit and a read circuit or the like on a chip and also to prevent the operating delay of a static random access memory device by boosting a potential of each bit line of a bit line pair more than a write enable voltage in response to a chip select signal. CONSTITUTION:When a chip select signal CS' is at a low level, the chip selecting state is attained and in case of the write mode, a data is written to a memory cell MC. Moreover, in case of the read mode, a data is read. When the chip select signal CS' or a block select signal BS' is at a high level, the chip non- selecting state is attained and the level of the bit lines BL, BL' reaches a higher voltage than the write enable voltage. Thus, at the write mode, the write is disabled and no data is read from the memory cell MC at the read mode. |
