发明名称 CHEMICAL COPPER PLATING SOLUTION
摘要 PURPOSE:To improve the tensile strength of a copper film formed by plating by adding a specified compound and a cationic surfactant to a chemical copper plating soln. contg. bivalent Cu ions, a complexing agent for bivalent Cu ions, a reducing agent for bivalent Cu ions, a pH adjusting agent, a complexing agent for univalent Cu ions and a surfactant as essential components. CONSTITUTION:To a chemical copper plating soln. are added 0.2-10mmol/l (expressed in terms of Si) Si compound such as sodium silicate, Ge oxide or V oxide and 0.02-0.5mmol/l quat. ammonium salt such as alkylammonium salt. The plating soln. contains bivalent Cu ions in the form of copper sulfate or the like, a complexing agent for bivalent Cu ions such as the Na salt of EDTA, 37% aqueous formaldehyde soln. as a reducing agent for bivalent Cu ions, NaOH enough to adjust the plating soln. to 11.7-12.6pH, a complexing agent for univalent Cu ions such as alpha,alpha'-dipyridyl and a polyoxyethylene type nonionic surfactant such as polyethylene glycol as essential components.
申请公布号 JPS60125378(A) 申请公布日期 1985.07.04
申请号 JP19830233599 申请日期 1983.12.13
申请人 HITACHI SEISAKUSHO KK 发明人 KIKUCHI HIROSHI;TOMIZAWA AKIRA;OKA HITOSHI
分类号 C23C18/40;(IPC1-7):C23C18/40 主分类号 C23C18/40
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