METHOD FOR MAKING AN ELECTRICAL CONTACT TO A SILICON SUBSTRATE THROUGH A RELATIVELY THIN LAYER OF SILICON DIOXIDE ON THE SURFACE OF THE SUBSTRATE AND METHOD FOR MAKING A FIELD EFFECT TRANSISTOR
摘要
申请公布号
EP0054163(B1)
申请公布日期
1985.07.03
申请号
EP19810109152
申请日期
1981.10.29
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
BARTHOLOMEW, ROBERT FORBELL;GARBARINO, PAUL LOUIS;GARDINER, JAMES ROBERT;REVITZ, MARTIN;SHEPARD, JOSEPH FRANCIS
