| 摘要 |
PURPOSE:To enable to given an evaluation, which is approximate to the actual condition, on the pinholes located on a photoresist by a method wherein a polysilicon layer pattern is formed by performing a dry etching on a polysilicon layer, and the quantity of pinholes generating on the stepped part of the photoresist is quantified. CONSTITUTION:A silicon oxide film 2 is formed on a silicon substrate 1, a polysilicon layer 3 is formed, and the stepping of the polysilicon layer 3 is formed by performing an etching using a photoresist film 4 as a mask. The photoresist film 4 is removed, and a phosphorus glass layer 5 is formed on the surface of the polysilicon layer 3 whereon the silicon oxide film 2 and a stepping are formed. The photoresist 6 to be evaluated is applied, and a post baking is performed. Subsequently, the above is dipped in hydrofluoric acid, and an etching is performed. As a result, the phosphorus glass layer 5 is circularly etched through the pinholes 7 of the photoresist 6, a pinhole-shaped parttern 8 is formed, and an observation under a microscope can be performed. |
