发明名称 TESTING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To make device evaluation accurate by avoiding the phenomenon of electric charge generating at a point to be irradiated by a method wherein secondary electrons releasing from the surface of the titled device are detected by irradiating the surface with electron rays, and, when the state of action of inner elements is tested by means of the number of release or the kinetic energy, a dielectric thin film substance having conductivity is uniformly kept applied on the surface of the device. CONSTITUTION:An SiO2 film 2 having different thicknesses is adhered on an Si substrate 1, and wirings 5 and 6 are formed on respective regions, then the entire surface is coated with a film 3 of PSG or the like. Next, wirings 7 and 8 are formed thereon and protected with a passivation film 4; in measurement of e.g. the potential of the wiring 6, the following process is taken: the dielectric thin film substance 9 having conductivity made of polymer material made to contain carbon particles is applied over the entire surface, and an electron ray 11 is made incide rectangularly to the position corresponding to the wiring 6, thus detecting the secondary electrons 12 released from the incidence point 10; then, the state of action of the wiring 6 is observed by giving the number of this release and the kinetic energy to a display device. Thus, the electric charging of the device in testing is avoided, and accordingly an accurate test result is obtained.
申请公布号 JPS60121734(A) 申请公布日期 1985.06.29
申请号 JP19830230197 申请日期 1983.12.05
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 FUKUDA YUKIO;WATANABE YOSHIO;JINNO TAKAMITSU
分类号 G01R31/302;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01R31/302
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