| 摘要 |
PURPOSE:To enable the formation of fine patterns and prevent the influence of outer contamination by a method wherein an SiN film is formed immediately under an Al alloy wiring. CONSTITUTION:An SiO2 film 27 and a boron PSG film 28 are successively formed on an Si substrate 21 where elements have been formed. Next, the SiN film 29 is formed on the film 28. Then, a contact hole 30 is successively formed in the films 29, 28, and 27, and an Al film 31 is deposited. An electrode wiring pattern is formed by patterning the film 31. This manufacture allows no decrease in the selection ratio of Al/resist in overtching because of the formation of SiN film containing no oxygen in the film, as the base of the film 31. Besides, the film 29 under the film 31 does not directly generate stress between molding resins; therefore, the generation of cracks in a pellet can be prevented. |
