Low temperature process for annealing shallow implanted n+/p junctions.

摘要

Disclosed is a low temperature technique for annealing implantation damage and activating dopants. Conventional furnace annealing requires temperatures as high as 1000 to 1100° C to completely anneal the dopant implantation damage; 75 KeV arsenic implantation followed by 550°C for 75 minutes and 900° C for 30 minutes in nitrogen for instance is not sufficient to anneal the implantation damage and results in a leakage current of the order of 1 mA per cm2. If, however, subsequent to the arsenic implantation, 0.4 KeV hydrogen ions are implanted using a Kaufman ion source with an accelerator current of 200 milliamp, then only 500 to 600° C for one hour anneal in nitrogen is sufficient to eliminate the arsenic implantation damage. This results in a leakage current of the order of 5 to 25 nA per cm2 and a complete dopant activation is achieved.