| 摘要 |
PURPOSE:To obtain a thin film element, which is not related with incident light from the outside, by depositing an amorphous thin film, whose optical forbidden- band width is small and light conducting characteristic is 1/100 or less, on an a-Si:H thin film element, at least on the part, to which light is irradiated. CONSTITUTION:A gate electrode 3 is evaporated on the surface on the opposite side of a light shielding material 2, which is arranged on a substrate 1. Only the gate part is selectively etched. Then the element is put into a glow discharge depositing device, and the substrate 1 is heated. Thereafter, an insulator, e.g., an SiN layer 4 is formed. A mixed gas of SiH4 and NH3 is introduced, decomposition is performed by the glow discharge, and SiN is deposited. An Si:H layer 5, which is the active region of the transistor, is layered and deposited. An a-Ge:H layer 6 is formed between the N<+> type a-Si:H layer 5 and a material 7, whose etching speed is slower than that of the a-Si:H and which indicates electric conduction, so as to hold the layer 6. An N type a-SiC:H layer 7 and an N<+> type a- Si:H layer 8 are deposited on the a-Ge:H layer 6. Finally an N<+> type a-Si:H layer 8 is selectively etched, source and drain electrodes 9 and 10 are evaporated, and a field effect transistor is formed. |
