| 摘要 |
PURPOSE:To enhance photosensitivity while maintaining the potential acceptance of an amorphous silicon photosensitive body in a necessary value by specifying a thickness ratio of a charge generating layer to a charge transfer layer and the thickness of the charge generating layer. CONSTITUTION:A first charge generating layer made of amorphous silicon hydride and/or silicon halide, and under this layer a second charge transfer layer made of amorphous silicon hydrocarbide and/or halocarbide are formed in the thickness ratio of the second layer to the sum of the first and second layers controlled in 0.15-0.50, and further on the first layer a surface modifying layer made of an inorganic material is formed, and the thicknesses of the first layer and the second layer are set in accordance with necessary potential acceptance and photosensitivity, and it is necessary to set that of the first layer to at least 10mum, thus permitting the obtained amorphous photosensitive body to be enhanced in photosensitivity and the function for maintaining potential stability. |
