| 摘要 |
PURPOSE:To obtain a film at a high speed by oppositely disposing a conductive substrate and electrodes in a reaction chamber which is reduced in pressure, connecting an AC power source with them, generating a plasma in stock gas presented in the chamber, and heating by a heater through an inductance element an atomic film in the gas on the surface of the substrate, thereby improving the film forming efficiency. CONSTITUTION:A stock filling tube 102 is connected through a valve 103 with a reaction chamber 100 which is shut off an external field by a grounded conductive casing 101, and an exhaust tube 104A is provided through a valve 104B at the end opposed to the tube. An electrode 105 and a support base 110 containing a heater 111 placed on a conductive substrate 106 are opposed in the chamber 100, the electrode 105 is connected through a matching box 108 with a high frequency power source 109, and both terminals of the heater 111 are connected through inductance elements 113, 114 with an operation power source 115. Thus, the impedance of a circuit which includes the heater 111 is increased to reduce the leakage current. |
