| 摘要 |
PURPOSE:To enable easy manufacture of a semiconductor device of high reliability with a high yield, by providing a process in which an emitter region is formed on the whole surface on the main side of a semiconductor substrate and surface treatment of the emitter region is performed by using as a mask an emitter electrode formed on the emitter region. CONSTITUTION:An oxide film 21 is formed on the whole surface of a semicondutor substrate 20, and the part of the film corresponding to the backside of the substrate 20 is removed. Thereafter boron, for instance, is injected from the back side to form an anode layer 22 having a prescribed diffusion depth. Next, after an oxide film 21 is formed afresh on the surface of the anode layer 22, the oxide film 21 on the main side is removed entirely therefrom. Then, phosphorus, for instance, is injected in the whole main surface of the exposed substrate 20 to form an emitter region 23. After the oxide film 21 is removed completely, a reinforcement plate 25 is bonded on the surface of the anode layer 22 wiht an aluminum layer 24 intreposed between them under the temperature of about 700 deg.C. Next, an emitter electrode 26 of a prescribed pattern is formed on the emitter region 23. Then, surface treatment is applied thereto by sand blast or the like, and thereby a bevel having a slanting peripheral suface is formed. |
