发明名称 SUBSTRATE TEMPERATURE CONTROL METHOD
摘要 PURPOSE:To facilitate the transfer of substrate by causing at least the external circumference of substrate to be vacuum-processed for being attracted to the cooled substrate pedestal. CONSTITUTION:A lower electrode 20 which is formed as a substrate pedestal is electrically insulated and sealed through an insulator 11 to the bottom wall of a vacuum processing chamber 10. The lower electrode 20, the discharge space 30 and the upper electrode 40 vertically opposing to said lower electrode through the space are provided within the vacuum processing chamber 10. Corresponding at least to external circumference of rear surface of substrate 50 to be placed, an insulator 60 is buried at the surface of the lower electrode 60, and if a substrate is not placed, the lower electrode at the internal side of insulator 20 is formed with a groove 21 which is connected to the discharge space 30. A coolant path 22 is formed to the lower electrode 20 at the lower position of groove 21. The lower electrode 20 is respectively provided with a cooling gas supply path 23a and cooling gas exhaust path 23b communicating with the groove 21, and a coolant supply path 24a and coolant exhaust path 24b communicating with the coolant path 22.
申请公布号 JPS60115226(A) 申请公布日期 1985.06.21
申请号 JP19830222046 申请日期 1983.11.28
申请人 HITACHI SEISAKUSHO KK 发明人 KAKEHI YUTAKA;NAKAZATO NORIO;FUKUSHIMA YOSHIMASA;HIRATSUKA YUKIYA;SHIBATA FUMIO;YAMAMOTO NORIAKI;TSUBONE TSUNEHIKO
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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