MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To produce a double layered electrode wiring by a method wherein the second Si film with low impurity concentration or no additive at all is deposited on the first Si film with high impurity concentration to substitute a high melting point metal for the second film by means of heat-treatment in the atmosphere of halogenide of high melting point metal. CONSTITUTION:After forming a field oxide film 2, a gate oxide film 3, a P added poly Si film 4 is deposited by means of low pressure CVD process and then a no-additive poly Si film 5 is further deposited to be etched for forming a gate electrode. Next Mo is substrated for a no-additive Si film by means of heat- treatment in the atmosphere of mixed gas of MoF6 and H2. Through these procedures, a double layered gate electrode of P added poly Si film 4 and Mo film 6 with high concentration is completed on the gate oxide film 3 on an Si substrate 1. The electrode in such a constitution is suitable for high speed operation due to excellent interfacial characteristics and lower wiring resistance.