| 摘要 |
<p>A process of manufacturing a high-efficiency, stable CdS-Cu2S solar cell using a thick film methodology, which process comprises the steps of: A-preparing a CdS slurry from a Cd-doped, CdS powder; B-depositing a 10-15 mu thick layer of the CdS slurry onto a substrate plated with thin layers of Zn and Cd; C-drying the CdS layered substrate and subjecting it to heat treatment; D-pressing the heat-treated substrate; E-subjecting the pressed, CdS layered substrate to another heat treatment to cause CdS recrystallisation and annealing; F-forming a thin layer of CuxS wherein the value of x is from 1.996 to 2, onto the surface of the heat-treated, CdS layered substrate under an inert atmosphere to produce a CdS-CuxS layered assembly; G-subjecting the CdS-CuxS layered assembly to heat treatment under a H2 atmosphere in the presence of CaO; H-providing an upper conductor onto the upper surface of the heat treated assembly to complete the desired, stable CdS-Cu2S solar cell; and I-encapsulating the obtained cell. This process is advantageous in that it can be carried out with a very simple equipment and sequence of steps, thereby making the overall cost of the resulting solar cells, even when encapsulated with glass, advantageously comparable with the overall cost involved for the manufacture of the cheapest known silicon-based solar cells.</p> |
