| 发明名称 |
Semiconductor device comprising a substrate. |
| 摘要 |
<p>A semiconductor device which comprises a copper base plate (4) bonded to a C.D.B. substrate (2) is allowed to have a thickness at least over 35 times the extent to which the copper base plate is extended when thermally bonded to said C.D.B. substrate.</p> |
| 申请公布号 |
EP0144866(A2) |
申请公布日期 |
1985.06.19 |
| 申请号 |
EP19840114132 |
申请日期 |
1984.11.22 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SAITO, YASUMASA C/O PATENT DIVISION;TANI, KEIZO C/O PATENT DIVISION |
| 分类号 |
H01L21/52;H01L21/58;H01L23/14;H01L23/373;(IPC1-7):H01L23/14;H01L23/36 |
主分类号 |
H01L21/52 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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