| 摘要 |
PURPOSE:To reduce soft errors generated by alpha ray irradiation by a method wherein the width of a depletion layer is made small as a high-capacitance structure in the region of a wide range from a transfer gate transistor to a capacitor electrode. CONSTITUTION:The transfer gate transistor uses N<+> type diffused layers 9 and 10 as the drain and source electrodes, and a conductive layer 11 formed on the layers and a P<-> type substrate 8 via thin insulation film as the gate electrode. The capacitor is composed of the extension region 12 of the layer 10 and a conductive layer 13 formed on this region via thin insulation film. P<+> type regions 14 and 15 are formed in the neighborhood of the respective lower parts of the region 12 and the layer 10, and thus the substrate concentration is high. The thickness of the depletion layer shown by the dot line is small in the range from the capacitor to the transfer gate transistor, resulting in a structure whereby soft errors generated by alpha ray irradiation are made difficult to occur. |
