| 摘要 |
PURPOSE:To enable speed-up by an increase in mobility of a semiconductor film by one to two figures by a method wherein the very surface of the main section of an amorphous semiconductor layer is crystallized. CONSTITUTION:The amorphous Si layer 2 is formed on the surface of a glass substrate 1, and its surface is single-crystallized or polycrystallized at least in an extremely thin region under a gate by electron beam annealing and the like, thus forming a crystallized Si layer 3. Thereafter, diffused layers 4 and 5, a field oxide film 6, gate oxide film 7, gate electrode 8, an Al electrode 9, etc. are formed at a low temperature into a MOSFET. |
