| 摘要 |
PURPOSE:To obtain a device, which can prevent the occurrence of contaminations during ion implanting and thermal processing and makes a good use of the excellent controllability on the impurities distribution by the ion implanting method, by providing both an ion implanting section and a thermal processing section in the same vacuum chamber. CONSTITUTION:A wafer 8 is placed on a wafer mount 2 of an ion implanting chamber 1a in a vacuum chamber 1, and ions are implanted by the ion beam which comes flying from the direction of the arrow. After implanting ions, when the wafer mount 2 and a thermal masking shield 7 are turned, the upper surface of the wafer mount 2 and the lower surface of the thermal processing chamber 1b coinside with each other and form a descending slope, and the wafer 8 moves into the thermal processing chamber 1b by its own weight, and is stopped and supported by a stopper 9. Under this state, when the thermal masking shield 7 is returned to its former position, the thermal processing chamber 1b is shut off from the ion implanting chamber 1a. In the thermal processing chamber 1b, a heating plate 6 is heated in advance up to the required temperature, and the wafer 8 is quickly heated and activated by a radiant heat from the heating plate 6.
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