| 摘要 |
PURPOSE:To measure magnetoresistance effect element characteristics under the state of a wafer before assembly by arranging a magnetoresistance effect element having structure in which a magnetic thin-film sensor is interposed and both sides of the sensor are covered with magnetic thin-film shields and a magnetoresistance effect element having structure in which the magnetic thin-film shield on at least one side is removed. CONSTITUTION:Magnetoresistance effect elements having structure in which magnetic thin-film sensors 3 are interposed and both sides of the sensors 3 are covered with magnetic thin-film shields 1, 1' are arranged to one parts, and magnetoresistance effect elements 6, 7 having structure in which the magnetic thin-film shields on at least one sides are disposed to other one parts. A film such as a permalloy film is evaporated on a wafer 5, the permalloy film is removed completely in sections corresponding to the elements 6, 7, unnecessary sections are removed through etching according to patterns of the predetermined lower shields 1 in other sections, and the lower shields 1 are formed. SiO2 lower insulating layers 2, the magnetoresistance effect sensors 3 and conductors 4 are shaped on the shields 1. SiO2 upper insulating layers 2' and the upper shields 1' are formed on these layers 2, sensors 3 and conductors 4. |
