| 摘要 |
PURPOSE:To realize a highly reliable photoelectric conversion element without making any step disconnection generate in an insulative protective film, which is formed on a light conductive layer, by a method wherein a process for forming the end parts of the light conductive layer in a taper shape is included in the title manufacturing method. CONSTITUTION:A chrome thin film is deposited on a glass substrate 11, and after that, a patterning is performed on a chrome electrode 12 as a first electrode. Places other than a desired position on the substrate 11 are covered with quartz glass masks 13, each having a reverse taper, and a hydrogenated amorphous silicon layer 14 is deposited by a glow discharge decomposition method of SiH4 through the quartz glass masks 13. The quartz glass masks 13 are released, dirts stuck on the surface are removed, and the hydrogenated amorphous silicon layer 14, which functions as a light conductive layer with its gentle taper- shaped end parts, is obtained. After this, by performing a DC sputtering in an atmosphere containing argon gas and O2 gas, an ITO electrode 15, which functions as a second light-transmitting electrode, is deposited. Lastly, a silicon oxynitriding film 16 is deposited as a light-transmitting insulating protective film by a plasma CVD method. |
