| 摘要 |
PURPOSE:To obtain an IC having excellent high-frequency characteristics by stabilizing the interface between a polycrystalline Si layer as a base electrode and a single crystal Si layer as a base region in a crystallographical manner and reducing a junction area between a buried region and a substrate. CONSTITUTION:An N type buried region 2 is formed to a central surface layer section in a P type Si substrate 1 through ion implantation while using an SiO2 film 10 as a mask, and SiO2 films 11 and Si3N4 films 12 are laminated and formed on both sides of the region 2. An N type Si layer is grown in an epitaxial manner, and a polycrystalline Si layer 14 is formed to a section as a collector electrode, a polycrystalline Si layer 15 also to a section as a base electrode and single crystal Si layer 13 to sections except said sections respectively. The thickness of the layers 13 in sections except the laminated films is thinned, the whole surface is coated with an SiO2 film 4, and a recessed section 141 is bored to the layer 14 while being adjoined to a collector region 131 consisting of the layer 13 deposited on the region 2. The recessed section 141 is buried with an N type single crystal Si layer 142, a P type base region 7 is shaped in the region 131, and an N type emitter region 8 is formed in the region 7. |
