| 摘要 |
PURPOSE:To simplify a photoetching process and to improve the yield and reliability of products by forming both conductive and shielding films on the same process. CONSTITUTION:An insulating film 2 is formed on the whole surface of a ferrite substrate 1, an MR element 3 consisting of ''Permalloy'', Ni-Co or the like is formed on the insulating film 2 and then a photoresist is masked to form a pattern. Then, a spacer layer 5 consisting of an insulating film is formed on the whole surface and two contact holes 7 are formed on the spacer layer 5 by photoetching to expose a part of the MR element 3. Then, a shielding film 6 and a conductive film 4 are simultaneously formed by vapor deposition method or the like and a prescribed pattern is formed on the films 6, 4 by photoetching. |
