| 摘要 |
PURPOSE:To enable to accurately form a mater to be processed in a fine pattern applying a multilayer resist technic by a method wherein an organic-matter film pattern having a taper is formed on a substrate, whereon the matter to be processed has been provided, and a directional dry-etching treatment is performed. CONSTITUTION:An Al-Si alloy film 6 for wiring pattern formation use is deposited on the whole surface of a substrate. An organic-matter film 8 is formed on the film 6. A coating is performed with a polysiloxane resin film 9 and resist patterns 10 are formed thereon. The film 9 is processed in a pattern shape. The film 8 is processed in a pattern having a taper by performing a reactive ion etching treatment using the patterns 10 as a mask respectively. A directional dry etching treatment, accompanied with an etching resolution of the film 8, is performed and a processing of the film 6 is performed. According to this method, no abnormal etching trouble such as an undercut, etc., generates in the pattern of the film 6. Then, by removing the patterns 10 used as a mask respectively, the desired Al-Si pattern can be obtained. |
