| 摘要 |
PURPOSE:To obtain a charge coupled device supplied with proper voltage by connecting a boosting circuit incorporating a voltage source supplying voltage and a reference power supply at ground potential to a reset drain diffusion layer constituting a charge coupled element and superposing the voltage of these power supplies. CONSTITUTION:A boosting circuit 29 is connected to a reset drain diffusion layer 5 constituting a charge coupled element 1, and superposed voltage generated in the circuit 29 is fed to the diffusion layer 5. A series circuit consisting of a voltage source 26 connected at ground potential, an IC external terminal 28 and a switch 27 is mounted to the boosting circuit 29 while a voltage source 24 for driving a CCD is fitted, and the voltage source 24 is connected to the switch 27 through a switch 25 and a capacitor 23. The boosting circuit is constituted in this manner, the switches 27 and 25 are controlled by an MOSFET, and voltage, which is not brought to too high value or too low value and is kept within bounds, is aplied to the diffusion layer 5, and the charge coupled device can be driven at low voltage. |
