| 摘要 |
PURPOSE:To manufacture an IC having multilayer structure simply by boring holes to a pad section for connection to the outside and a vertical connecting wiring section with an active layer as an upper layer in an inter-layer insulating film on a first active layer and forming metallic bumps. CONSTITUTION:A gate 3, a drain 4, a source 5, Al wirings 7, 8 and an Al pad 7' are formed on an SiO2 film 2 on an Si substrate 1, and the whole is coated with SiO2 9. An opening 10 for a pad and an opening 11 for a vertical wiring are shaped simultaneously, and the surfaces of both openings are coated and Au thin-films are evaporated to form bumps 12, 13. According to the constitution, processes can be simplified because the pad for connection to the outside and the first vertical wiring can be shaped at the same time, and the pad is protected in processes in which second, third and subsequent active layers are laminated because the metallic bumps are formed on the first vertical wiring and the pad. According to the constitution, a multilayer type IC having high reliability connected by the vertical wiring is obtained simply. |
