| 摘要 |
PURPOSE:To make mass production of a belt-like silicon crystal having good quality by providing plates for separating a silicon melt so as to enclose a die without contacting with the die in a crucible and providing the apertures thereof at the points apart furthest from the charging point of raw material. CONSTITUTION:Plates 19a, 19b for separating a silicon melt are welded and installed to enclose a die 13 without contacting with the die 13 in a crucible 12. The apertures 20a, 20b of the plates 19a, 19b are provided at the point furthest from pipes 16a, 16b for charging raw material, i.e., in the longitudinal central part of the die 13. A seed crystal is thus brought into contact with the silicon melt 11 raised through the slit of the die 13 and when a belt-like silicon crystal is pulled up, the temp. gradient generated in the melt 11 is made uniform by the flow of the melt 11 and therefore the belt-like silicon crystal having good quality is obtd. |
