| 摘要 |
A solid state image sensor of the interline transfer type comprises a sensing and vertical transfer portion, a horizontal charge transfer portion and an output portion, having a large number of sensing element regions, each of which contains a photo-sensing area, a vertical charge transfer portion and a channel stopper area with substantially the same impurity concentration provided in areas surrounding the photo-sensing area and forming a transfer gate area are provided in the sensing and vertical transfer portions, and the arrangement of first and second transfer electrodes are provided for the sensing element regions such that the second transfer electrode is located completely on the first transfer electrode in the area of a part of the channel stopper region between two adjacent photo-sensing areas so that it is shielded from a part of the channel stopper region by the first transfer electrode so that the charge transfer efficiency in the vertical charge transfer portion is substantially improved.
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