| 摘要 |
PURPOSE:To obtain a solar battery which has excellent radiation resistant characteristic and high efficiency by forming a P type InP layer on an N type InP single crystal substrate so that the thickness of the InP layer is set to the prescribed value or lower and the carrier density of the substrate is set to the prescribed value or higher. CONSTITUTION:A P type InP layer 2 which contains Zn as an impurity is formed on the surface of an N type InP single crystal substrate 1. Then, a pectinated electrode 3 made of Au-Zn and a back surface electrode 5 made of Au-Sn are formed by vacuum depositing method, and ohmically contacted by a heat treatment in hydrogen. The formation of the pattern of the pectinated electrode uses a lifting-OFF step. A reflection preventive film 4 made of Ta2O5 is formed by a vacuum depositing method to finish the manufacture of a solar battery. |
