| 摘要 |
PURPOSE:To enhance integration density of a CCD image pickup element by forming a conductive thin film having the light transmissivity on a semiconductor substrate where the Schottky barrier is provided and by causing the photoelectric charges to leak to the thin film area through the Schottky barrier when the photoelectric charges generated in the substrate by the light entering the substrate passing through the thin film is excessive. CONSTITUTION:A plurality of p<+> type channel stopper regions 2 are formed by diffusion on the surface of the p<-> type Si substrate 1, an n type vertical resistor 3 using a p-type well region 13 as a base is provided in the side of the one region 2 on the substrate 1 exposed between said regions 2, and an n type region 14 is also formed in the side of the other region 2. As explained above, a plurality of CCD element regions are formed on the same substrate 1, a readout gate 8 buried in the SiO2 film 6 is provided on the region 3, and a transparent electrode 15 consisting of SnO2 is extended and deposited on the film 6 in contact with the region 14 from the location where the SiO2 film 6 is removed. In this way, a part of the electrode 15 provided on the region 14 is used as the photosensing part 11 and the light 12 is made to enter there. |
