| 发明名称 |
MBE growth technique for matching superlattices grown on GaAs substrates |
| 摘要 |
Misfit dislocation density at an InAs-GaAs interface is reduced in both InAs-GaSb and In1-xGaxAs-GaSb1-yAsy superlattices grown on GaAs substrates by means of a MBE (molecular beam epitaxy) growth technique consisting of a step graded sequence of composition layers between substrate and superlattice whose composition changes in discrete concentration steps from the composition of the substrate to the composition of the superlattice. |
| 申请公布号 |
US4517047(A) |
申请公布日期 |
1985.05.14 |
| 申请号 |
US19810227889 |
申请日期 |
1981.01.23 |
| 申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE ARMY |
发明人 |
CHANG, CHIN-AN;CHANG, LEROY L.;ESAKI, LEO |
| 分类号 |
C30B23/02;C30B25/02;H01L21/203;H01L29/15;H01L33/04;H01L33/06;(IPC1-7):C30B25/02 |
主分类号 |
C30B23/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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