发明名称 |
X-Ray lithographic system |
摘要 |
While a convex mirror is being rotated or rotatingly vibrated about a rotational axis which is parallel to the center axis of the convex mirror and which is eccentric to the convex mirror, a synchrotron radiation flux is caused to be incident on the convex mirror, and a radiation sensitive resist film is irradiated with the reflected radiation flux through a mask. Thus, an area of uniform irradiation can be increased remarkably as compared with that in a prior art, and the invention is well suited to the irradiation of a semiconductor wafer having a large area.
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申请公布号 |
US4514857(A) |
申请公布日期 |
1985.04.30 |
申请号 |
US19830541447 |
申请日期 |
1983.10.13 |
申请人 |
HITACHI, LTD. |
发明人 |
KIMURA, TAKASHI;MOCHIJI, KOZO;OBAYASHI, HIDEHITO |
分类号 |
G03F7/20;H01L21/027;H01L21/30;H05G2/00;(IPC1-7):G21K5/00 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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