发明名称 X-Ray lithographic system
摘要 While a convex mirror is being rotated or rotatingly vibrated about a rotational axis which is parallel to the center axis of the convex mirror and which is eccentric to the convex mirror, a synchrotron radiation flux is caused to be incident on the convex mirror, and a radiation sensitive resist film is irradiated with the reflected radiation flux through a mask. Thus, an area of uniform irradiation can be increased remarkably as compared with that in a prior art, and the invention is well suited to the irradiation of a semiconductor wafer having a large area.
申请公布号 US4514857(A) 申请公布日期 1985.04.30
申请号 US19830541447 申请日期 1983.10.13
申请人 HITACHI, LTD. 发明人 KIMURA, TAKASHI;MOCHIJI, KOZO;OBAYASHI, HIDEHITO
分类号 G03F7/20;H01L21/027;H01L21/30;H05G2/00;(IPC1-7):G21K5/00 主分类号 G03F7/20
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