| 摘要 |
PURPOSE:To form the titled device of high performance, high integration degree, and high reliability which has been subjected to the prevention of latch-up and the fine formation of elements, etc. by a method wherein a p<+> type Si substrate containing high concentration boron is used, and each element region is flattened on one surface. CONSTITUTION:Element isolation regions 202 are formed on the p<+> type Si substrate 201 containing boron, and an oxide layer is grown on the exposed region of the substrate. Thereafter, the oxide layer on one of the substrate regions is removed, and a thin oxide layer 203 is left on the other of the substrate regions. Next, a polycrystalline Si layer 204 of the same thickness as that of the region 202 is deposited over the entire surface, and then changed into a p type single crystal Si layer 205 by single crystallization by irradiation with a laser beam over the entire surface. The single crystal Si on the regions 202 is etched, p type Si layers being left only in the substrate regions; and phosphorus is ion-implanted to the p type single crystal Si layer with the oxide layer 203 present in the lower part. Accordingly, a p type element region 206 composed of the p type single crystal Si layer and an n type element region 207 composed of the single crystal Si region converted into n type are formed. |
