| 摘要 |
PURPOSE:To prevent the decrease in the dielectric constant due to the mixing of Si into a dielectric layer by a method wherein a barrier metal (TaN, TiN, etc.) is used, instead of poly Si of the conventional use, for the lower side electrode layer of the capacitor of a semiconductor memory cell. CONSTITUTION:A P type Si substrate 1 is provided with a field oxide film 9, gate oxide film 4, poly Si gate electrode 5, surface oxide film 10, and n<+> layers 2 and 3 by the fixed method. Next, the lower side electrode of TaN 6 and Ta are successively laminated by sputtering, and then changed into a Ta2O3 layer 7 by heating in O2, and the upper side opposed electrode of poly Si 8 is formed thereon. It is covered with a PSG11, and an Al bit line 12 is attached. Since a barrier metal is used for the lower side electrode layer of the capacitor, the decrease in the high dielectric constant of Ta2O3 due to the mixing of Si is avoided, and the resistance of contact of the n<+> layers with the lower side electrode greatly reduces; accordingly the MOS dynamic RAM of a small size and high performance can be obtained. |
