| 摘要 |
PURPOSE:To check damage of a silicon crystal lattice on the surface of the collector lead out port of a semiconductor integrated circuit device by a method wherein a poly-silicon layer to act as a buffer material against ion implantation for formation of the collector lead out port is formed simultaneously with formation of a poly-silicon layer for formation in a shallow type and provided to an emitter region part. CONSTITUTION:After oxide films 4 on the surfaces of the part to act as an emitter region and the part to act as a collector lead out port are removed according to photoetching, a poly- silicon layer is deposited thin according to the CVD method on the whole of the surface of a substrate. After than, after the poly-silicon layer at the unnecessary parts is removed according to photoetching to leave the poly-silicon layers 10a, 10b on the surfaces of the parts to act as the emitter region and the collector lead out port, a photo resist is convered on the poly-silicon layer 10b at first, and low concentration N type impurity ions are implanted to the poly- silicon layer 10a. Then, a photo resist is covered on the poly-silicon layer 10a in opposition, and ion implantation of N type impurities such as phosphorus, etc. of high concentration is performed to the poly-silicon layer 10b. The above-mentioned impurities are diffused thermally at the same time by performing final heat treatment to form a P<+> type diffusion layer 11 for a base, an N<+> type diffusion layer 12 for an emitter and an N<+> type diffusion layer 13 to act as the collector lead out port. |
