Method for processing semiconductor components

摘要

A method is described for processing semiconductor components which are applied on one side of a semiconductor wafer (1), that semiconductor surface (5) which is fitted with semiconductor components being provided with a covering layer (4) which cures such that it is free of gas and can expand, and with a first carrier (6) which is applied on the covering layer (4). After the semiconductor components have been separated, the covering layer (4) is pulled off the first carrier with the semiconductor components, is expanded and is applied to a second carrier (8). The semiconductor components can be both transported and electrically tested or further-processed with the aid of the second carrier (8). The method is suitable for processing any desired components which are applied on one side of a semiconductor wafer (1), especially for Schottky diodes having a beam-lead structure. <IMAGE>