| 摘要 |
PURPOSE:To lessen the incompleteness of blocking effect due to a step as well as to improve the charge holding characteristics of a dark current time by a method wherein a thick SiC film is used as the blocking layer of hole on an amorphous silicon close-contact type image sensor. CONSTITUTION:A sensor substrate is formed by successively laminating chromium light-shielding films 12 of 3mm. wide, 20mm. long and 1,000Angstrom thick having a window of 100mum wide, an SiO2 film 13 of 5,000Angstrom which is deposited by performing a sputtering method for the purpose of reducing the step generated by the formation of the light-shielding films 12, and a transparent conductive film 14 of 2mm. wide, 20mm. long and 500Angstrom thick. On this substrate, an SiC film 15 of 1,000Angstrom as the blocking layer of hole, a 5ppm-boron-doped high resistance amorphous silicon 16 of 2.5mum, and a 250ppm-boron-doped P type amorphous silicon 17 of 0.3mum are formed. Lastly, chromium 18 of 500Angstrom and gold 19 of 1,000Angstrom are vapor-deposited, an etching process is performed at 100mum in width and in 8 element/mm. density, and an individual electrode is formed. |
