| 摘要 |
The invention relates to a process for forming a pn boundary layer by using an ion implantation process with low-resolution mass separation or without mass separation, and an annealing process. Into the semiconductor substrate, ions are implanted by means of ion implantation with low-resolution mass separation or without mass separation, which results in a high throughput, and the semiconductor substrate is then annealed to form an oxide film on the substrate surface and to diffuse the dopant in an oxidising atmosphere. In the case of a solar cell, a p-type silicon substrate is subjected to ion implantation without mass separation, using PH3 as the discharge gas. The ion implantation process is carried out with an energy of 25 keV and an overall ion dose of 5 . 10<15> cm<-2>. This is followed by annealing the substrate in humid oxygen at a temperature from approximately 700 to 1000 DEG C. The resulting solar cell has an off-load voltage of approximately 0.58 volt.
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