| 摘要 |
PURPOSE:To form a Bi-MOS semiconductor device by a simplified process, by making semiconductor layers for MOS circuit elements to be thin at the same time when grooves for inter-element separation at bipolar circuit elements are formed, or when semiconductor layers at an I<2>L circuit element part are made to be thin. CONSTITUTION:Grooves 100, which are used for inter-element separation at a bipolar transistor part 1,000, are also composed at a n-channel MOS transistor part 3000 so that a source-drain 9, gate 10, and substrate-takeout area 7, for the n-channel MOS transistor, are formed on the bottom surface of the grooves 100. A P-type island area 20, which electrically conducts to a P-type semiconductor substrate 1, is also formed below the grooves 100. That is, with the grooves 100, which are for inter-element separation, being shared at the n-channel MOS transistor part 3000, an epitaxial layer 4 is made to be thin by the depth of the grooves 100 so as to facilitate an electrical connection of the P-type island area 20 to the P-type substrate 1, and not to cause the number of the process to be increased. |
