发明名称 |
Injection laser manufacture |
摘要 |
A method of making a channel substrate buried heterostructure InP/(In,Ga)(As,P) laser avoids the need to use two separate stages of epitaxial growth by using a channel in a (100) surface substrate 1 extending in the [011] direction with {111}B sides. This allows the channel to be made before the growth of an (In,Ga)(As,P) blocking layer 3 which can be grown under conditions which do not require the use of a mask to prevent nucleation on the channel sides. The same technique is also applicable to the manufacture of a terraced substrate laser incorporating a blocking layer.
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申请公布号 |
US4509996(A) |
申请公布日期 |
1985.04.09 |
申请号 |
US19830508293 |
申请日期 |
1983.06.24 |
申请人 |
INTERNATIONAL STANDARD ELECTRIC CORPORATION |
发明人 |
GREENE, PETER D.;TURLEY, STEPHEN E. H. |
分类号 |
H01L21/208;H01S5/00;H01S5/223;H01S5/24;(IPC1-7):H01L21/208 |
主分类号 |
H01L21/208 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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