| 摘要 |
PURPOSE:To eliminate exfoliation by a method wherein, after a barrier metal layer of a high melting metal such as Ti or W is formed, an Al layer is deposited by using tri-isobutyl aluminum as a reaction gas so as to provide a cover layer of an Al alloy containing Si or W when the Al layer constituting a wiring layer is formed on an Si substrate. CONSTITUTION:A barrier metal layer 2 formed of a high melting metal of Ti, W or the like is made to grow in vapor phase on an Si substrate 1 by using TiCl4 as a gas source when Ti is used and WF6 as the source when W is used, so as to avoid that an Al layer 3 provided above contacts directly with the Si substrate 1. Next, the Al layer 3 having a necessary thickness is deposited by using only isobutyl aluminum, and a cover layer 4 of an Al/Si alloy containing Si of about 1% or of Al/W containing W of about 10% is connected thereon. By this method, the vapor-phase growth of all layers is enabled, and pits in the Al layer 3 and pits and electromigration in the surface of the substrate 1 are reduced. |
