| 摘要 |
PURPOSE:To change a bipolar type device into a polyphase effectively by introducing an impurity for burying and diffusing a collector into an SiO2 pad, forming a single crystal layer by energy lines and diffusing the impurity to the signal crystal layer to form a buried diffusion layer. CONSTITUTION:SiO2 film pads 2 in approximately 1mum thickness are shaped selectively on an Si substrate 1, and the ions of an N<+> type impurity are implanted deeply. The whole surface of the substrate 1 is coated with a polycrystalline Si layer 3. The layer 3 is changed into a single crystal by using energy lines, and a lateral epitaxial layer 4 having the same crystalline orientation (100) as the substrate 1 is grown. The ions of the N<+> type impurity are implanted to the side surfaces of element forming regions 7 with tapered side surfaces. |
